Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 15, 2007
Issued Date -
N/A
app pub date -
Mar 23, 2005
filing date -
Dec 14, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully