Organometallic precursors for the chemical phase deposition of metal films in interconnect applications
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United States of America Patent
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May 22, 2007
Grant Date -
Oct 5, 2006
app pub date -
Mar 31, 2005
filing date -
Mar 31, 2005
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Abstract
Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
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