Bitline direction shielding to avoid cross coupling between adjacent cells for NAND flash memory

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United States of America Patent

PATENT NO 7221008
APP PUB NO 20050072999A1
SERIAL NO

10680665

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Abstract

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A NAND flash memory structure and method of making a flash memory structure with shielding in the bitline direction as well as in wordline and diagonal directions from Yupin effect errors and from disturbs.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES LLC6900 DALLAS PARKWAY SUITE 325 PLANO TX 75024

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Henry San Jose, CA 83 4477
Fang, Hao Cupertino, CA 127 1556
Matamis, George Aichi, JP 120 3560
Pham, Tuan San Jose, CA 85 2485

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