Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
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United States of America Patent
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May 29, 2007
Issued Date -
N/A
app pub date -
May 3, 2004
filing date -
Jun 5, 2002
priority date (Note) -
Expired
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Abstract
A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silicon, nitrogen, hydrogen or oxygen into the reactor chamber, generating a torroidal RF plasma current in a reentrant path through the processing region by applying RF plasma source power at an HF frequency on the order of about 10 MHz to a portion of a reentrant conduit external of the chamber and forming a portion of the reentrant path, applying RF plasma bias power at an LF frequency on the order of one or a few MHz to the workpiece, and maintaining the temperature of the workpiece under about 100 degrees C.
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