Method of making a memory cell

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United States of America Patent

PATENT NO 7235419
APP PUB NO 20060099822A1
SERIAL NO

11302119

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harshfield, Steven T Emmett, ID 38 4862
Wright, David Q Boise, ID 15 902

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