Method for forming tungsten materials during vapor deposition processes
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United States of America Patent
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Jun 26, 2007
Grant Date -
Dec 28, 2006
app pub date -
Aug 29, 2006
filing date -
Jun 28, 2000
priority date (Note) -
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Abstract
In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.
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