Semiconductor device and method of fabricating the same
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United States of America Patent
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Jun 26, 2007
Grant Date -
N/A
app pub date -
Dec 3, 1999
filing date -
Dec 3, 1998
priority date (Note) -
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Abstract
There is provided a crystalline TFT in which reliability comparable to or superior to a MOS transistor can be obtained and excellent characteristics can be obtained in both an on state and an off state. A gate electrode of the crystalline TFT is formed of a laminate structure of a first gate electrode made of a semiconductor material and a second gate electrode made of a metal material. An n-channel TFT includes an LDD region, and a region overlapping with the gate electrode and a region not overlapping with the gate electrode are provided, so that a high electric field in the vicinity of a drain is relieved, and at the same time, an increase of an off current is prevented.
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