Self-regulating process-error trimmable PTAT current source

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7236048
SERIAL NO

11284583

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A current source for generating a PTAT current using two bipolar transistors with an 1:A emitter area ratio implements a split resistor architecture to cancel mismatch errors in the current mirror of the current source. In one embodiment, a first resistor is coupled to the unit area bipolar transistor and a second resistor is coupled to the A-ratio-area bipolar transistor. The first resistor has a resistance value indicative of the emitter resistance r.sub.e of the bipolar transistors while the second resistor has a resistance value satisfying the equation r.sub.e*(lnA-1). In another embodiment, an emitter area trim scheme is applied in a PTAT current source to cancel, in one trim operation, both bipolar transistor area mismatch error and sheet resistance variations. The emitter area trim scheme operates to modify the emitter area of the A-ratio-area bipolar transistor to select the best effective emitter area that provides the most accurate PTAT current.

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Patent Owner(s)

  • NATIONAL SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Holloway, Peter R Groveland, MA 33 729
Wan, Jun Wilmington, MA 122 2364

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