Method for fabricating tandem thin film photoelectric converter
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United States of America Patent
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Jul 3, 2007
Grant Date -
Aug 18, 2005
app pub date -
Apr 2, 2003
filing date -
Apr 9, 2002
priority date (Note) -
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Abstract
A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).
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