Methods for fabricating one or more metal damascene structures in a semiconductor wafer
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United States of America Patent
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Jul 3, 2007
Grant Date -
May 11, 2006
app pub date -
Nov 8, 2005
filing date -
Nov 10, 2004
priority date (Note) -
Expired
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Abstract
Methods for fabricating one or more metal (e.g., copper) damascene structures in a semiconductor wafer use at least three polishing steps to reduce erosion topography in the resulting metal damascene structures and/or increase throughput. The polishing steps may be performed at four polishing units of a polishing apparatus, which may include one or more pivotable load/unload cups to transfer the semiconductor wafer between some of the polishing units.
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