Wafer characteristics via reflectometry and wafer processing apparatus and method
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United States of America Patent
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Jul 3, 2007
Grant Date -
Oct 5, 2006
app pub date -
Oct 6, 2004
filing date -
Oct 7, 2003
priority date (Note) -
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Abstract
An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.
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