Split gate type flash memory device and method for manufacturing same
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United States of America Patent
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Jul 3, 2007
Grant Date -
Dec 22, 2005
app pub date -
Jun 16, 2005
filing date -
Jun 16, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A split gate type flash memory device and a method of manufacturing the split gate type flash memory device are disclosed. The split gate type flash memory device includes a silicon epitaxial layer formed in an active region of a bulk silicon substrate and a disturbance-preventing insulating film formed in the bulk silicon substrate between a source region and a drain region of the device. According to selected embodiments of the invention, the disturbance-preventing insulating film is formed using a Shallow Trench Isolation (STI) forming process.
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