Shunted phase change memory
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United States of America Patent
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Jul 10, 2007
Grant Date -
Jun 17, 2004
app pub date -
Dec 13, 2002
filing date -
Dec 13, 2002
priority date (Note) -
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status (Latency Note)
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Abstract
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.
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