Thin wafer detectors with improved radiation damage and crosstalk characteristics
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 10, 2007
Grant Date -
Nov 11, 2004
app pub date -
May 4, 2004
filing date -
May 5, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides for reduced radiation damage susceptibility, decreased affects of crosstalk, and increased flexibility in application. In one embodiment, the present invention includes a back side illuminated photodiode array with a back side etching that minimizes the active area layer, thereby decreasing the affects of crosstalk. The back side etching is preferably, but by no way of limitation, in the form of 'U' or 'V' shaped grooves. The back side illuminated with back side etching (BSL-BE) photodiodes are implemented in an array and have superior performance characteristics, including less radiation damage due to a thinner active area, and less crosstalk due to shorter distances for minority carriers to diffuse to the PN junction.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully