Method of operating a complementary bit resistance memory sensor
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United States of America Patent
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Jul 10, 2007
Grant Date -
Feb 2, 2006
app pub date -
Sep 28, 2005
filing date -
Nov 20, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a method and apparatus for sensing the resistance state of a programmable resistance memory, using complementary memory elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the resistance elements to determine the resistance state of an element being read.
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