Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range
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United States of America Patent
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Jul 10, 2007
Grant Date -
Mar 31, 2005
app pub date -
Sep 11, 2004
filing date -
Sep 25, 2003
priority date (Note) -
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Abstract
Provided are a phase-change memory device and method that maintains a resistance of a phase-change material in a reset state within a constant resistance range. In the method, data is provided to a first phase-change memory cell and then it is first determined whether data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are not identical, a complementary write current is provided to the first phase-change memory cell and it is second determined whether the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical. If the data stored in the first phase-change memory cell and the data provided to the first phase-change memory cell are identical, data is provided to a second phase-change memory cell.
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