Test masks for lithographic and etch processes
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United States of America Patent
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Jun 13, 2006
Grant Date -
Dec 11, 2003
app pub date -
Dec 17, 2002
filing date -
Jun 7, 2002
priority date (Note) -
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Abstract
A mask design is generated for patterning a test wafer using a lithographic or etch process, the process is characterized based on the patterned test wafer, and a pattern-dependent model is used based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.
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