Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
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United States of America Patent
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Jul 17, 2007
Grant Date -
Jun 23, 2005
app pub date -
Dec 17, 2003
filing date -
Dec 17, 2003
priority date (Note) -
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Abstract
A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
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