Method for filling recessed micro-structures with metallization in the production of a microelectronic device
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United States of America Patent
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Jul 17, 2007
Grant Date -
Feb 21, 2002
app pub date -
Feb 4, 1998
filing date -
Feb 4, 1998
priority date (Note) -
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Abstract
A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.
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