Integration of ALD/CVD barriers with porous low k materials
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United States of America Patent
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Jul 17, 2007
Grant Date -
Dec 23, 2004
app pub date -
Dec 19, 2003
filing date -
Jan 7, 2003
priority date (Note) -
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Abstract
A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a barrier layer on the substrate. Pre-cleaning the substrate minimizes the diffusion of the barrier layer into the low k dielectric layer and/or enhances the deposition of the barrier layer.
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