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Abstract

In a FET having a thin-film SOI layer, to prevent a parasitic resistance increase in source/drain regions. To realize an elevated layer to be formed on the source/drain region without using a lithography process and without a fear of a short circuit. Element-isolation insulating films 7, which are taller than a semiconductor layer 3, are formed surrounding the island-shaped semiconductor layer (SOI layer) 3, while gate electrodes 5a, 8a which are taller than the element-isolation insulating films 7 are formed on the semiconductor layer 3. A polycrystalline silicon film 11 is deposited on the whole surface. elevated layers 11a, 11b which are shorter than the element-isolation insulating film 7 are formed on the source/drain regions 3a, 3b by chemical-mechanical polishing and etching back. Silicide layers 13a to 13c are formed on the gate electrode and on the elevated layers. An interlayer insulating film 14 is formed, and a metal electrode 16 is formed.

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First Claim