Self refresh period control circuits

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United States of America Patent

PATENT NO 7248527
APP PUB NO 20060023546A1
SERIAL NO

11190430

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Abstract

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In a self refresh period control circuit for controlling a refresh period of a semiconductor memory device in response to operating temperature of the device, a temperature sensor part generates a first period control signal in response to a self refresh start signal or self refresh completion signal, senses operating temperature of the semiconductor memory device in response to a clock signal generated by the self refresh start signal, and generates a corresponding second period control signal. A period magnification control part controls a self refresh period in response to the first and second period control signals. Accordingly, a refresh period characteristic change based on operating temperature, which is causable by an initial self refresh, is implemented.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Park, Sang-Kyun Suwon-si, KR 28 331

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