Method of detecting un-annealed ion implants
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United States of America Patent
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Jul 31, 2007
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N/A
app pub date -
Sep 30, 2004
filing date -
Sep 30, 2004
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Abstract
A current-voltage response of at least one site of a semiconductor wafer where ions have been implanted in the semiconducting material of the semiconductor wafer is measured prior to annealing the semiconductor wafer. From the measured response, a determination is made whether the ion implantation is within acceptable tolerance(s).
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