Nonvolatile memory with multi-frequency charge pump control
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United States of America Patent
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Jul 31, 2007
Grant Date -
Oct 27, 2005
app pub date -
Apr 27, 2005
filing date -
Apr 27, 2004
priority date (Note) -
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Abstract
The present invention is directed to largely reduce peak current at the time of operation of a boosting circuit provided for an EEPROM. In the erase/write operation, first, a low-frequency clock signal as a selection clock signal is input by a low-frequency clock control signal to a charge pump. After lapse of a certain period (about 1/3 of fall time), a high-frequency clock signal having a frequency higher than that of the low-frequency clock signal is output by a high-frequency clock control signal and is input as the selection clock signal to the charge pump to boost a voltage to a predetermined voltage level. In such a manner, while suppressing the peak of consumption current, the fall time of the boosted voltage can be shortened.
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