Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
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United States of America Patent
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Aug 7, 2007
Issued Date -
N/A
app pub date -
Feb 28, 2005
filing date -
Nov 26, 1997
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Expired
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Abstract
We have discovered a method of providing a thin, approximately from about 2 .ANG. to about 100 .ANG. thick Ta.sub.N seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the Ta.sub.N seed layer. Further, the Ta.sub.N seed layer exhibits low resistivity, in the range of 30 .mu..OMEGA.cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the Ta.sub.N seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the Ta.sub.N seed layer.
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