Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
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United States of America Patent
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Aug 7, 2007
Grant Date -
Feb 3, 2005
app pub date -
Aug 31, 2004
filing date -
Jan 18, 2000
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Abstract
Integrated circuits include networks of electrical components that are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have begun using copper in combination with diffusion barriers, rather than aluminum, to form the wires. Unfortunately, typical diffusion barriers add appreciable resistance to the wiring and require costly fabrication methods. Accordingly, the inventors devised one or more exemplary methods for making integrated-circuit wiring from materials, such as copper-, silver-, and gold-based metals. One exemplary method removes two or more masks in a single removal procedure, forms a low-resistance diffusion barrier on two or more wiring levels in a single formation procedure, and fills insulative material around and between two or more wiring levels in a single fill procedure. This and other embodiments hold the promise of simplifying fabrication of integrated-circuit wiring.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- MICRON TECHNOLOGY, INC.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ahn, Kie Y | Chappaqua, NY | 652 | 41490 |
Forbes, Leonard | Corvallis, OR | 1219 | 61459 |
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Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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