US Patent No: 7,254,151

Number of patents in Portfolio can not be more than 2000

Nanoscale coherent optical components

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ALSO PUBLISHED AS: 20040213307
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Abstract

This invention generally relates to nanotechnology and nanoelectronics as well as associated methods and devices. In particular, the invention relates to nanoscale optical components such as electroluminescence devices (e.g., LEDs), amplified stimulated emission devices (e.g., lasers), waveguides, and optical cavities (e.g., resonators). Articles and devices of a size greater than the nanoscale are also included. Such devices can be formed from nanoscale wires such as nanowires or nanotubes. In some cases, the nanoscale wire is a single crystal. In one embodiment, the nanoscale laser is constructed as a Fabry-Perot cavity, and is driven by electrical injection. Any electrical injection source may be used. For example, electrical injection may be accomplished through a crossed wire configuration, an electrode or distributed electrode configuration, or a core/shell configuration. The output wavelength can be controlled, for example, by varying the types of materials used to fabricate the device. One or more such nanoscale lasers may also be integrated with other nanoscale components within a device.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
PRESIDENT AND FELLOWS OF HARVARD COLLEGECAMBRIDGE, MA1082

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Ritesh Cambridge, MA 6 47
Duan, Xiangfeng Mountain View, CA 76 1262
Huang, Yu Princeton, NJ 125 725
Lieber, Charles M Lexington, MA 88 2679

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Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
PRESIDENT AND FELLOWS OF HARVARD COLLEGE (12)
8,153,470 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 0 2006
7,915,151 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices 2 2006
7,666,708 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 3 2006
7,595,260 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 4 2006
7,476,596 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 9 2006
7,858,965 Nanowire heterostructures 0 2007
8,058,640 Branched nanoscale wires 0 2007
7,619,290 Nanosensors 7 2008
8,232,584 Nanoscale sensors 0 2009
7,911,009 Nanosensors 2 2009
7,956,427 Nanosensors 0 2010
8,399,339 Nanosensors 0 2011
 
SAMSUNG ELECTRONICS CO., LTD. (6)
7,400,665 Nano-VCSEL device and fabrication thereof using nano-colonnades 2 2005
7,453,097 Nanowire light emitting device and method of fabricating the same 2 2005
7,435,996 Nanowire light emitting device and method of fabricating the same 3 2005
7,919,786 Nanowire light emitting device 0 2008
8,120,015 Resonant structure comprising wire and resonant tunneling transistor 0 2009
8,293,554 Luminous device and method of manufacturing the same 0 2009
 
ZENA TECHNOLOGIES, INC. (5)
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UNIVERSITY OF IOWA RESEARCH FOUNDATION (2)
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DREXEL UNIVERSITY (1)
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THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (1)
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UNIVERSITY OF DAYTON (1)
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OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (2)
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