Damascene process for use in fabricating semiconductor structures having micro/nano gaps
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United States of America Patent
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Aug 14, 2007
Grant Date -
Nov 10, 2005
app pub date -
May 3, 2005
filing date -
May 4, 2004
priority date (Note) -
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Abstract
In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.
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