Method of controlling the critical dimension of structures formed on a substrate
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United States of America Patent
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Aug 14, 2007
Grant Date -
Jan 25, 2007
app pub date -
Jul 19, 2005
filing date -
Jul 19, 2005
priority date (Note) -
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Abstract
The present invention provides a method of patterning a substrate, the method including, inter alia, forming a multi-layered structure on the substrate formed from first, second and third materials. The first, second and third materials are exposed to an etch chemistry, with the first and second materials having a common etch rate along a first direction, defining a first etch rate, and the first and third materials having a similar etch rate along a second direction, transversely extending to the first direction, defining a second etch rate. Typically, the etch rate is selected to be different in furtherance of facilitating control of the dimensions of features formed during the etching process.
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