Integrated passive devices
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United States of America Patent
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Aug 21, 2007
Grant Date -
Nov 17, 2005
app pub date -
Apr 29, 2004
filing date -
Apr 29, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.
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