Etching technique to planarize a multi-layer structure
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United States of America Patent
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Aug 21, 2007
Grant Date -
Apr 5, 2007
app pub date -
Sep 30, 2005
filing date -
Sep 30, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention is directed to a method of etching a multi-layer structure formed from a layer of a first material and a layer of a second material differing from the first material to obtain a desired degree of planarization. To that end, the method includes creating a first set of process conditions to etch the first material, generating a second set of process conditions to etch the second material; and establishing an additional set of process conditions to concurrently etch the first and second materials at substantially the same etch rate.
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