Enhancement of copper line reliability using thin ALD tan film to cap the copper line
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United States of America Patent
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Aug 28, 2007
Grant Date -
Sep 30, 2004
app pub date -
Dec 19, 2003
filing date -
Jan 7, 2003
priority date (Note) -
Expired
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Abstract
A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. In one aspect, the cap layer comprises tantalum nitride. The cap layer provides good barrier and adhesive properties, thereby enhancing the electrical performance and reliability of the interconnect.
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