Dry etching process for compound semiconductors
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United States of America Patent
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Aug 28, 2007
Grant Date -
Aug 18, 2005
app pub date -
Feb 18, 2004
filing date -
Feb 18, 2004
priority date (Note) -
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Abstract
Accordingly, this invention relates to an dry etching process for semiconductor wafers. More particularly, the present invention discloses a dry etching process including a halogen etchant (24) and a nitrogen gas (28) that selectively etches a compound semiconductor material (18) faster than the front-side metal layers (16A)(16B). Further, the dry etching process produces a vertical wall profile on compound semiconductor material (18) in both X (38) and Y (40) crystalline directions without undercutting the top of a via-opening.
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