Semiconductor device with porous interlayer insulating film
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United States of America Patent
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Sep 4, 2007
Grant Date -
Feb 10, 2005
app pub date -
Sep 10, 2004
filing date -
Mar 31, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.
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