Light emitting semiconductor device
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United States of America Patent
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Sep 4, 2007
Grant Date -
Dec 14, 2006
app pub date -
Jun 10, 2005
filing date -
Jun 10, 2005
priority date (Note) -
Expired
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Abstract
A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.
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