Opto-electronic memory element on the basis of organic metalloporphyrin molecules
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United States of America Patent
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Sep 4, 2007
Grant Date -
Jul 6, 2006
app pub date -
Dec 30, 2004
filing date -
Dec 30, 2004
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Abstract
A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin derivative, and wherein the second electrode is transparent and includes ZnO, which is doped with B, Al, Ga, or Mg.
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