Nonvolatile semiconductor memory and making method thereof
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United States of America Patent
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Sep 11, 2007
Grant Date -
Aug 11, 2005
app pub date -
Dec 7, 2004
filing date -
Feb 10, 2004
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device of a split gate structure having a gate of low resistance suitable to the arrangement of a memory cell array is provided. When being formed of a side wall spacer, a memory gate is formed of polycrystal silicon and then replaced with nickel silicide. Thus, its resistance can be lowered with no effect on the silicidation to the selection gate or the diffusion layer.
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