Formation of fully silicided metal gate using dual self-aligned silicide process
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United States of America Patent
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Sep 18, 2007
Grant Date -
Feb 2, 2006
app pub date -
Jul 14, 2004
filing date -
Jul 14, 2004
priority date (Note) -
Expired
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Abstract
An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the thickness of the silicided source/drain regions is provided. A method of forming the advanced gate structure is also provided in which the silicided source and drain regions are formed prior to formation of the silicided metal gate region.
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