Fast Si diodes and arrays with high quantum efficiency built on dielectrically isolated wafers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 2, 2007
Grant Date -
N/A
app pub date -
Apr 7, 2005
filing date -
Apr 9, 2004
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Fast silicon diodes and arrays with high quantum efficiency built on dielectrically isolated wafers. A waveguide is formed in the top surface of the silicon that utilizes total internal reflection from the Si--Si Oxide interface to form an internal mirror. This mirror reflects incoming light into the waveguide cavity, with the light being trapped there by surrounding reflective interfaces. A masking layer may be used to define an input window. Individual diodes or linear arrays may be formed as desired. Some alternate embodiments are described.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully