US Patent No: 7,279,731

Number of patents in Portfolio can not be more than 2000

Edge illuminated photodiodes

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Abstract

This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OSI OPTOELECTRONICS, INC.HAWTHORNE, CA29
UDT SENSORS, INC.HAWTHORNE, CA17

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bui, Peter Steven Westminster, CA 51 278
Mansouri, Manoocher Studio City, CA 5 37
Taneja, Narayan Dass Long Beach, CA 52 291

Cited Art

Patent Info (Count) # Cites Year
 
AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD. (2)
4,904,861 Optical encoder using sufficient inactive photodetectors to make leakage current equal throughout 31 1988
4,998,013 Optical encoder with inactive photodetectors 30 1989
 
DIGIRAD CORPORATION (2)
6,670,258 Fabrication of low leakage-current backside illuminated photodiodes 35 2001
6,734,416 Fabrication of low leakage-current backside illuminated photodiodes 27 2002
 
NEC CORPORATION (2)
5,825,047 Optical semiconductor device 44 1994
6,546,171 Structure for shielding stray light in optical waveguide module 26 2001
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (2)
5,214,276 Semiconductor structure for photodetector 30 1991
6,218,684 Photodiode with buffer layer 26 1998
 
AGILENT TECHNOLOGIES, INC. (1)
5,430,321 Photodiode structure 35 1994
 
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (1)
4,887,140 Clover design lateral effect position-sensitive device 30 1989
 
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY (1)
5,446,751 Optoelectronic device 29 1992
 
CANON KABUSHIKI KAISHA (1)
5,252,142 Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps 47 1991
 
EASTMAN KODAK COMPANY (1)
5,408,122 Vertical structure to minimize settling times for solid state light detectors 27 1993
 
FUJITSU LIMITED (1)
5,144,379 Semiconductor device having a group III-V epitaxial semiconductor layer on a substrate 34 1991
 
GENERAL ELECTRIC COMPANY (1)
6,504,158 Imaging array minimizing leakage currents 23 2000
 
INTEVAC, INC. (1)
5,576,559 Heterojunction electron transfer device 26 1994
 
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) (1)
4,874,939 Method and apparatus for detecting position/variance of input light using linear and quadratic outputs 34 1987
 
KABUSHIKI KAISHA TOSHIBA (1)
5,599,389 Compound semiconductor and method of manufacturing the same 26 1994
 
LOCKHEED MARTIN CORPORATION (1)
6,438,296 Fiber optic taper coupled position sensing module 24 2000
 
LUCENT TECHNOLOGIES INC. (1)
6,326,649 Pin photodiode having a wide bandwidth 36 1999
 
MARCONI MEDCICAL SYSTEMS, INC. (1)
6,426,991 Back-illuminated photodiodes for computed tomography detectors 73 2000
 
MARCONI MEDICAL SYSTEMS, INC. (1)
6,510,195 Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same 101 2001
 
NIPPON TELEGRAPH AND TELEPHONE CORPORATION (1)
5,818,096 Pin photodiode with improved frequency response and saturation output 41 1997
 
OSMIC, INC. (1)
5,923,720 Angle dispersive x-ray spectrometer 70 1997
 
ROCKY MOUNTAIN BIOSYSTEMS, INC. (1)
6,352,517 Optical monitor of anatomical movement and uses thereof 38 1999
 
SENSORS UNLIMITED, INC. (1)
6,489,635 Epitaxially grown p-type diffusion source for photodiode fabrication 23 2001
 
SITEK ELECTRO OPTICS AB (1)
5,869,834 Photodetector having an integrated function for elimination of the effects of stray light 25 1997
 
U.S. PHILIPS CORPORATION (1)
4,904,608 Pin photodiode having a low leakage current 31 1989
 
UNITED MICROELECTRONICS CORP. (1)
6,569,700 Method of reducing leakage current of a photodiode 34 2001
 
UNIVERSITY OF HAWAII (1)
5,237,197 Integrated VLSI radiation/particle detector with biased pin diodes 27 1991

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
UDT SENSORS, INC. (9)
8,120,023 Low crosstalk, front-side illuminated, back-side contact photodiode array 0 2006
7,656,001 Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays 1 2006
7,728,367 Edge illuminated photodiodes 0 2007
7,709,921 Photodiode and photodiode array with improved performance characteristics 2 2008
7,898,055 Photodiode with controlled current leakage 0 2008
8,049,294 Front side illuminated, back-side contact double-sided PN-junction photodiode arrays 2 2009
8,035,183 Photodiodes with PN junction on both front and back sides 0 2010
7,948,049 Photodiode and photodiode array with improved performance characteristics 1 2010
8,278,729 Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays 0 2011
 
OSI OPTOELECTRONICS, INC. (8)
7,880,258 Thin wafer detectors with improved radiation damage and crosstalk characteristics 1 2005
7,576,369 Deep diffused thin photodiodes 8 2005
7,579,666 Front illuminated back side contact thin wafer detectors 3 2006
7,655,999 High density photodiodes 4 2006
7,968,964 High density photodiodes 1 2009
8,324,670 Edge illuminated photodiodes 0 2010
8,399,909 Tetra-lateral position sensing detector 0 2010
8,338,905 Photodiode and photodiode array with improved performance characteristics 0 2011
 
ASML NETHERLANDS B.V. (3)
8,138,485 Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector 2 2008
8,426,831 Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector 0 2012
8,324,598 Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector 0 2012

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