Bitline governed approach for programming non-volatile memory
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United States of America Patent
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Oct 9, 2007
Grant Date -
Mar 9, 2006
app pub date -
Aug 18, 2005
filing date -
May 5, 2004
priority date (Note) -
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Abstract
In a system for programming non-volatile storage, technology is disclosed for programming with greater precision and reasonable program times. In one embodiment, a first voltage is applied to a bit line for a first non-volatile storage element in order to inhibit that first non-volatile storage element. A first program voltage is applied to the first non-volatile storage element. For example, a program pulse is applied to a control gate for the first non-volatile storage element. During the program pulse, the bit line is changed from said first voltage to a second voltage, where the second voltage allows the first non-volatile storage element to be programmed.
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