Method for fabricating a film bulk acoustic resonator
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United States of America Patent
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Oct 16, 2007
Grant Date -
Feb 17, 2005
app pub date -
Apr 20, 2004
filing date -
Apr 22, 2003
priority date (Note) -
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Abstract
A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer on a substrate, providing a sacrificial layer on part of the dielectric layer; providing a bottom electrode on part of the sacrificial layer on part of the dielectric layer; providing a piezoelectric layer on the bottom electrode; patterning a top electrode on the piezoelectric layer; and removing the sacrificial layer. The substrate may have a cavity receiving the sacrificial layer. As a result, a cantilevered resonator having an air gap between the bottom electrode and the dielectric layer may be simply fabricated.
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