Flash EEprom system capable of selective erasing and parallel programming/verifying memory cell blocks

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7283397
APP PUB NO 20030090941A1
SERIAL NO

10290564

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. A chunk of user data is programmed into a group of memory cells in parallel, the programming of individual memory cells being terminated when they are determined to have reached desired threshold level ranges while the programming of other memory cells continues. Other improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES LLC6900 DALLAS PARKWAY SUITE 325 PLANO TX 75024

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harari, Eliyahou Los Gatos, CA 199 19865
Mehrotra, Sanjay Milpitas, CA 86 11760
Norman, Robert D San Jose, CA 140 12102

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