Methods for forming porous insulator structures on semiconductor devices
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United States of America Patent
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Oct 23, 2007
Grant Date -
Feb 10, 2005
app pub date -
Sep 1, 2004
filing date -
Aug 29, 2002
priority date (Note) -
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Abstract
A method for forming a porous insulative structure on a semiconductor device structure includes forming a layer of unconsolidated electrically insulative, or dielectric, material with microcapsules dispersed therethrough on at least a portion of the surface of the semiconductor device structure. The microcapsules may be hollow or include a removable filler. Once the layer has been formed, the unconsolidated material is at least partially consolidated. Filler, if any, may be removed from the microcapsules to provide a porous insulative layer or structure. This layer or structure may be configured to support conductive elements or other features of the semiconductor device.
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