Semiconductor device with capacitor element
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United States of America Patent
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-
Oct 30, 2007
Grant Date -
Jul 26, 2007
app pub date -
Sep 11, 2006
filing date -
Jan 25, 2006
priority date (Note) -
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status (Latency Note)
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Abstract
After a capacitor forming portion is formed on a semiconductor substrate by patterning an insulating film and a silicon film, a sidewall insulating film is formed on each of the side surfaces of the capacitor forming portion. Then, the insulating film is selectively removed such that the silicon film is exposed in a depressed portion surrounded by the sidewall insulating film. Subsequently, a first metal film is deposited and then a thermal process is performed to change the silicon film into a first metal film. Thereafter, an insulating film and a second metal film are buried in the depressed portion. The insulating film composes the capacitor insulating film of a capacitor element. The first metal silicide film and the second metal film compose the lower and upper electrodes of the capacitor element, respectively.
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