Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage
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United States of America Patent
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Nov 6, 2007
Grant Date -
Apr 6, 2006
app pub date -
Nov 21, 2005
filing date -
Aug 11, 2000
priority date (Note) -
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Abstract
A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.
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