Method of forming a memory cell
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United States of America Patent
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Nov 13, 2007
Grant Date -
Mar 2, 2006
app pub date -
Oct 27, 2005
filing date -
Aug 29, 2002
priority date (Note) -
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Abstract
The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the processes can form the metal-rich metal chalcogenide without the use of photodoping techniques and without direct deposition of the metal. For example, the process can remove selenium from silver selenide.
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