Semiconductor on insulator vertical transistor fabrication and doping process
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United States of America Patent
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Nov 13, 2007
Grant Date -
Jun 23, 2005
app pub date -
Dec 1, 2004
filing date -
Aug 10, 2000
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Abstract
A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
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