Phase-changeable memory device and method of manufacturing the same
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United States of America Patent
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Nov 13, 2007
Grant Date -
Aug 25, 2005
app pub date -
Feb 11, 2005
filing date -
Feb 25, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A phase changeable random access memory (PRAM) and methods for manufacturing the same. An example unit cell of a non-volatile memory, such as a PRAM, includes a MOS transistor, connected to an address line and a data line, where the MOS transistor receives a voltage from the data line. The unit cell further includes a phase change material for changing phase depending on heat generated by the voltage and a top electrode, connected to a substantially ground voltage.
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