Selective application of program inhibit schemes in non-volatile memory
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United States of America Patent
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Nov 13, 2007
Grant Date -
Dec 14, 2006
app pub date -
May 12, 2005
filing date -
May 12, 2005
priority date (Note) -
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Abstract
A non-volatile memory system is programmed so as to reduce or avoid program disturb. In accordance with one embodiment, multiple program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes have been discovered to better minimize or eliminate program disturb at select word lines. In one embodiment, selecting a program inhibit scheme includes selecting a program voltage pulse ramp rate. Different ramp rates have been discovered to better minimize program disturb when applied to select word lines. In another embodiment, the temperature of a memory system is detected before or during a program operation. A program inhibit scheme can be selected based on the temperature of the system.
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